Advantages
and part characteristics:
As
shown in graph using an IGBT, the forward voltage is
reduced
at current levels above 12 Amps.
Change
from a MOSFET circuit to an IGBT can be made without
having to redesign the gate drive circuitry.
Also both devices can be operated in the linear
range where a desired output current can be obtained by
maintaining a given gate voltage.
IGBT
does not have the parasitic diode found in MOSFETs, so
provisions must be taken when driving inductive loads.
